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industrial & multimarket data sheet 2.3, 2011-02-28 final optimos? bsb056n10nn3 g n-channel power mosfet
optimos? power-mosfet bsb056n10nn3 g final data sheet 1 2.3, 2011-02-28 1 description optimos?100v products are class leading power mosfets for highest power density and energy efficient solutions. ultra low gate- and output charges together with lowest on state resistance in small footprint packages make optimos? 100v the best choice forthe demanding requirements of voltage regulator solutions in solar, drives, datacom and telecom applications. super fast switching control fets together with low emi sync fets provide solutions that are easy to design in. optimos? produc ts are available in high performance packages to tackle your most challenging applicatio ns giving full flexibility in optimizing space- efficiency and cost. features ? optimized for high switchin g frequency dc/dc converter ? excellent q g x r ds(on) product (fom) ? very low on-resistance r ds(on) ? pb-free plating; rohs compliant ? halogen-free according to iec61249-2-21 ? double sided cooling ? compatible with directfet? pack age mn footprint and outline 1) ? low parasitic inductance ? low profile (<0.7 mm) applications ? synchronous rectification ? primary side switches ? power management for high performance computing ? high power density point of load converters 1) directfet ? is a trademark of inte rnational rectifier corpor ation. BSB056N10NN3G uses directfet ? technology licensed from international rectifier corporation table 1 key performance parameters parameter value unit related links v ds 100 v ifx optimos webpage r ds(on),max 5.6 m ifx optimos product brief i d 83 a ifx optimos spice models q oss 73 nc ifx design tools q g . typ 56 type package marking bsb056n10nn3 g mg-wdson-2 0110
optimos? power-mosfet bsb056n10nn3 g final data sheet 2 2.3, 2011-02-28 2 maximum ratings at t j = 25 c, unless otherwise specified. 3 thermal characteristics table 2 maximum ratings parameter symbol values unit note / test condition min. typ. max. continuous drain current i d --83 a v gs =10 v, t c =25 c 52 v gs =10 v, t c =100 c 9 v gs =10 v, t a =25 c, r thja =45 k/w) 1) 1) device on 40 mm x 40 mm x 1.5 mm epoxy pcb fr4 with 6cm2 (o ne layer, 70 m thick) cop per area for drain connection. pcb is vertical in still air. pulsed drain current 2) 2) see figure 3 for more detailed information i d,pulse --332 t c =25 c avalanche energy, single pulse e as --450 mj i d =30 a, r gs =25 gate source voltage v gs -20 - 20 v power dissipation p tot --78 w t c =25 c 2.8 t a =25 c, r thja =45 1) k/w operating and storage temperature t j , t stg -40 - 150 c iec climatic category; din iec 68-1 55/150/56 table 3 thermal characteristics parameter symbol values unit note / test condition min. typ. max. thermal resistance, junction - case r thjc - - 1.6 k/w top 1bottom device on pcb r thja -- 45 6 cm 2 cooling area 1) 1) device on 40 mm x 40 mm x 1.5 mm epoxy pcb fr4 with 6 cm2 (o ne layer, 70, thick) copper area for drain conneciton. pcb is vertical in still air.
optimos? power-mosfet bsb056n10nn3 g electrical characteristics final data sheet 3 2.3, 2011-02-28 4 electrical characteristics electrical characteristics, at t j=25 c, unless otherwise specified. table 4 static characteristics parameter symbol values unit note / test condition min. typ. max. drain-source breakdown voltage v (br)dss 100 - - v v gs =0 v, i d =1 ma gate threshold voltage v gs(th) 22.73.5 v ds = v gs , i d =100 a zero gate voltage drain current i dss -0.110a v ds =100v, v gs =0 v, t j =25 c - 10 100 v ds =100 v, v gs =0 v, t j =125 c gate-source leakage current i gss - 10 100 na v gs =20 v, v ds =0 v drain-source on-state resistance r ds(on) -55.6m v gs =10 v, i d =30a 6.2 8.1 v gs =6 v, i d =15a gate resistance r g -0.5- transconductance g fs 34 69 s | v ds |>2| i d|rds(on)max , i d =30 a table 5 dynamic characteristics parameter symbol values unit note / test condition min. typ. max. input capacitance c iss - 4100 5500 pf v gs =0 v, v ds =50 v, f =1 mhz output capacitance c oss - 750 1000 reverse transfer capacitance c rss -27- turn-on delay time t d(on) -15- ns v dd =50v, v gs =10 v, i d =30 a, r g =1.6 rise time t r -9- turn-off delay time t d(off) -25- fall time t f -8-
optimos? power-mosfet bsb056n10nn3 g electrical characteristics final data sheet 4 2.3, 2011-02-28 table 6 gate charge characteristics 1) 1) see figure 16 for gate charge parameter definition parameter symbol values unit note / test condition min. typ. max. gate to source charge q gs -17- nc v dd =50 v, i d =30 a, v gs =0 to 10 v q gd 9.7 gate to drain charge q sw -20- switching charge q g -5674 gate charge total v plateau -4.2- v output charge q oss 73 97 nc v dd =50 v, v gs =0 v table 7 reverse diode characteristics parameter symbol values unit note / test condition min. typ. max. diode continuous forward current i s 65 a t c =25 c diode pulse current i s,pulse 316 diode forward voltage v sd -0.91.2v v gs =0 v, i f = i s , t j =25 c reverse reco very charge q rr -174- nc v r =50v, i f = 30a , d i f /d t =100 a/s reverse recovery time t rr -64- ns
optimos? power-mosfet bsb056n10nn3 g electrical characteristics diagrams final data sheet 5 2.3, 2011-02-28 5 electrical characteristics diagrams table 8 1 power dissipation 2 drain current p tot = f( t c ) i d =f(t c ); parameter :v gs table 9 3 safe operating area t c =25 c 4 max. transient thermal impedance i d =f( v ds ); t j =25 c; d=0; parameter: t p z (thjc) =f( t p ); parameter: d= t p / t
optimos? power-mosfet bsb056n10nn3 g electrical characteristics diagrams final data sheet 6 2.3, 2011-02-28 table 10 5 typ. output characteristics t c =25 c 6 typ. drain-source on-state resistance i d =f( v ds ); t j =25 c; parameter: v gs r ds(on) =f( i d ); t j =25 c; parameter: v gs table 11 7 typ. transfer characteristics 8 typ. forward transconductance i d =f(vgs); | v ds |>2| i d | r ds(on)max g fs =f( i d ); t j =25 c
optimos? power-mosfet bsb056n10nn3 g electrical characteristics diagrams final data sheet 7 2.3, 2011-02-28 table 12 9 drain-source on-state resistance 10 typ. gate threshold voltage r ds(on) =f( t j ); i d =30 a; v gs =10 v v gs(th) =f( t j ); v gs = v ds ; table 13 11 typ. capacitances 12 forward characteristics of reverse diode c=f( v ds ); v gs =0 v; f =1 mhz i f =f( v sd ); parameter: t j
optimos? power-mosfet bsb056n10nn3 g electrical characteristics diagrams final data sheet 8 2.3, 2011-02-28 table 14 13 avalanche characteristics 14 typ. gate charge i as =f( t av ); r gs =25 ; parameter: t j(start) v gs =f( q gate ); i d =30 a pulsed; parameter: v dd table 15 15 drain-source breakdown voltage 16 gate charge waveforms v br(dss) =f( t j ); i d =1 ma
optimos? power-mosfet bsb056n10nn3 g package outlines final data sheet 9 2.3, 2011-02-28 6 package outlines figure 1 outlines mg-wdson-2, dimensions in mm/inches
optimos? power-mosfet bsb056n10nn3 g package outlines final data sheet 10 2.3, 2011-02-28 7 package outlines figure 2 outlines mg-wdson-2, dimensions in mm/inches
optimos? power-mosfet bsb056n10nn3 g package outlines final data sheet 11 2.3, 2011-02-28 8 package outlines
optimos? power-mosfet bsb056n10nn3 g revision history final data sheet 12 2.3, 2011-02-28 9 revision history we listen to your comments any information within this document that you feel is wrong, unclear or missing at all? your feedback will help us to continuously improve the quality of this document. please send your proposal (including a reference to this document) to: erratum@infineon.com edition 2011-02-28 published by infineon technologies ag 81726 munich, germany ? 2011 infineon technologies ag all rights reserved. legal disclaimer the information given in th is document shall in no event be rega rded as a guarantee of conditions or characteristics. with respect to any ex amples or hints given herein, any typi cal values stated herein and/or any information regarding the application of the device, infineon technologies hereby disclaims any and all warranties and liabilities of any kind, including wit hout limitation, warranties of non-infringement of intellectual property rights of any third party. information for further information on technology, delivery terms and conditions and prices, please contact the nearest infineon technologies office ( www.infineon.com ). warnings due to technical requirements, components may contain dangerous substances. for in formation on the types in question, please contact the neares t infineon technologies office. the infineon technologies component described in this data sheet may be used in life-support devices or systems and/or automotive, aviation and aerospace applicat ions or systems only with the express written approval of infineon technologies, if a failure of such components can reasonably be expected to cause the failure of that life-support, automotive, aviation and aerospace device or s ystem or to affect the safe ty or effectiveness of that device or system. life support devices or systems are inte nded to be implanted in the human body or to support and/or maintain and sustain and/or protec t human life. if they fail, it is reason able to assume that the health of the user or other persons may be endangered.. revision history: 2011-02-28, 2.3 previous revision: revision subjects (major ch anges since last revision) 0.1 release of target data sheet 2.0 release of final data sheet 2.3 package outlines errata corrections

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